Transistors - Bipolar (BJT) - Single
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- onsemi (4)
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- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 30 V
- Transistor Type : NPN
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 100mA, 1A
- Operating Temperature : -55°C ~ 150°C (TJ)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 50 @ 1A, 1V
5 Records