Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Operating Temperature : 150°C (TJ)
- Current - Collector (Ic) (Max) : 100 mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 2mA, 20mA
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 300V 0.1A ... |
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35,000
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 300V 0.1A ... |
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|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PNP 300V 0.1A ... |
-
|
35,000
In-stock
|
Get Quote |