Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Diodes Incorporated
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Transistor Type : NPN
- Mounting Type : Surface Mount
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Product Status : Active
- Package / Case : TO-261-4, TO-261AA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 40 @ 30mA, 10V
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