Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 300 V
- Frequency - Transition : 50MHz
- Current - Collector (Ic) (Max) : 100 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 30 @ 20mA, 10V
- Current - Collector Cutoff (Max) : 100nA (ICBO)
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 300V 0.1A ... |
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35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS PNP 300V 0.1A ... |
-
|
35,000
In-stock
|
Get Quote |