Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Voltage - Collector Emitter Breakdown (Max) : 40 V
- Product Status : Active
- Power - Max : 250 mW
- Current - Collector (Ic) (Max) : 100 mA
- Vce Saturation (Max) @ Ib, Ic : 200mV @ 5mA, 50mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 1mA, 6V
- Package / Case : 3-XFDFN
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NXP Semiconductors | NOW NEXPERIA 2PA1... |
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