Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Voltage - Collector Emitter Breakdown (Max) : 40 V
- Supplier Device Package : SOT-323
- Product Status : Active
- Frequency - Transition : 250MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 150mA, 1V
- Vce Saturation (Max) @ Ib, Ic : 750mV @ 50mA, 500mA
- Power - Max : 200 mW
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors | NEXPERIA PMST4401 ... |
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35,000
In-stock
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