Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 400 V
- Operating Temperature : 150°C (TJ)
- Frequency - Transition : -
- Mounting Type : Through Hole
- Current - Collector Cutoff (Max) : 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20 @ 300mA, 5V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 400V 3A T... |
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35,000
In-stock
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