Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Operating Temperature : 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
- Frequency - Transition : 80MHz
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
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