Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NTE Electronics, Inc.
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Operating Temperature : 150°C (TJ)
- Frequency - Transition : 150MHz
- Power - Max : 1 W
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 1A
- Product Status : Active
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