Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 150 mW
- Operating Temperature : 150°C (TJ)
- Transistor Type : PNP
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
- Product Status : Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 1mA, 6V
2 Records