Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce:
-
- Filter:
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- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 200 mW
- Mounting Type : Surface Mount
- Transistor Type : NPN
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Operating Temperature : -
- Product Status : Active
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
5,684
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
2,308
In-stock
|
Get Quote | |||
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
35,000
In-stock
|
Get Quote |