Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 200 mW
- Mounting Type : Surface Mount
- Transistor Type : NPN
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Operating Temperature : -
- Vce Saturation (Max) @ Ib, Ic : 500mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 210 @ 2mA, 10V
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