Transistors - Bipolar (BJT) - Single
- Frequency - Transition:
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- Vce Saturation (Max) @ Ib, Ic:
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- Filter:
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 200 mW
- Mounting Type : Surface Mount
- Transistor Type : NPN
- Package / Case : TO-236-3, SC-59, SOT-23-3
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 100mA, 1V
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.5A S... |
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5,891
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.5A S... |
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|
35,000
In-stock
|
Get Quote |