Transistors - Bipolar (BJT) - Single
- Filter:
-
- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 200 mW
- Mounting Type : Surface Mount
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- Product Status : Active
- DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
1 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
5,684
In-stock
|
Get Quote |