Transistors - Bipolar (BJT) - Single
- Operating Temperature:
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- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 200 mW
- Mounting Type : Surface Mount
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Current - Collector (Ic) (Max) : 500 mA
- Transistor Type : NPN
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 150mA, 10V
- Product Status : Active
2 Records