Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Power - Max : 900 mW
- Current - Collector Cutoff (Max) : 1µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 500mA, 2V
- Package / Case : TO-226-3, TO-92-3 Long Body
50 Records