Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Frequency - Transition : 80MHz
- Product Status : Active
- Operating Temperature : 150°C (TJ)
- Current - Collector (Ic) (Max) : 150 mA
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
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