Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Frequency - Transition : 80MHz
- Transistor Type : NPN
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Mounting Type : Surface Mount
- DC Current Gain (hFE) (Min) @ Ic, Vce : 120 @ 2mA, 6V
6 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
17,058
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
4,469
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
6
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
-
|
35,000
In-stock
|
Get Quote |