Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Frequency - Transition : 80MHz
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 2mA, 6V
- Package / Case : TO-236-3, SC-59, SOT-23-3
- Power - Max : 150 mW
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
3 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
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155,402
In-stock
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Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
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6,508
In-stock
|
Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 0.15A ... |
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|
35,000
In-stock
|
Get Quote |