Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Voltage - Collector Emitter Breakdown (Max) : 60 V
- Supplier Device Package : SOT-23-3
- Transistor Type : NPN
- Product Status : Obsolete
- Power - Max : 350 mW
- Vce Saturation (Max) @ Ib, Ic : 250mV @ 10mA, 100mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 100 @ 100mA, 1V
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