Transistors - Bipolar (BJT) - Single
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- onsemi (2)
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- Transistors - Bipolar (BJT) - Single
- Voltage - Collector Emitter Breakdown (Max) : 80 V
- Frequency - Transition : 150MHz
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max) : 100nA
- Mounting Type : Through Hole
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
3 Records