Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- NXP Semiconductors
- Current - Collector (Ic) (Max) : 500 mA
- Vce Saturation (Max) @ Ib, Ic : 1.5V @ 100µA, 100mA
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce : 20000 @ 100mA, 5V
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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NXP Semiconductors | TRANS NPN DARL 30V... |
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35,000
In-stock
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Get Quote | ||
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NXP Semiconductors | TRANS PNP DARL 30V... |
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35,000
In-stock
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Get Quote |