Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- Current - Collector (Ic) (Max) : 500 mA
- Voltage - Collector Emitter Breakdown (Max) : 30 V
- Mounting Type : Through Hole
- Operating Temperature : 150°C (TJ)
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Transistor Type : NPN - Darlington
- DC Current Gain (hFE) (Min) @ Ic, Vce : 10000 @ 100mA, 5V
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