Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 500 mA
- Voltage - Collector Emitter Breakdown (Max) : 400 V
- Operating Temperature : 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 1V @ 10mA, 100mA
- Product Status : Active
- Mounting Type : Surface Mount
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Toshiba Electronic Devices and Storage Corporation | PB-FREE POWER TRA... |
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