Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector (Ic) (Max) : 100 mA
- Operating Temperature : 125°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 300mV @ 1mA, 10mA
- Transistor Type : PNP
- Power - Max : 100 mW
- DC Current Gain (hFE) (Min) @ Ic, Vce : 350 @ 2mA, 6V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 120V 0.1A ... |
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