Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce:
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- Frequency - Transition:
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- Filter:
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Current - Collector Cutoff (Max) : 1µA (ICBO)
- Current - Collector (Ic) (Max) : 2 A
- Operating Temperature : 150°C (TJ)
- Mounting Type : Through Hole
- Transistor Type : PNP
- Power - Max : 900 mW
- Package / Case : TO-226-3, TO-92-3 Long Body
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