Transistors - Bipolar (BJT) - Single
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- onsemi (4)
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- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 1V
- Transistor Type : NPN
- Mounting Type : Through Hole
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 500mA
- Package / Case : TO-226-3, TO-92-3 (TO-226AA) Formed Leads
6 Records