Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 2V
- Power - Max : 900 mW
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Supplier Device Package : 3-CPH
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Transistor Type : NPN
- Operating Temperature : 150°C (TJ)
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