Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 2V
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Transistor Type : PNP
- Current - Collector (Ic) (Max) : 1 A
- Operating Temperature : 150°C (TJ)
- Mounting Type : Surface Mount
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 50V 1A PW... |
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35,000
In-stock
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