Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 100mA, 2V
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- Current - Collector Cutoff (Max) : 1µA (ICBO)
- Mounting Type : Through Hole
- Power - Max : 1 W
- Package / Case : TO-226-3, TO-92-3 Long Body (Formed Leads)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 50mA, 1A
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