Transistors - Bipolar (BJT) - Single
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- onsemi (2)
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- Transistors - Bipolar (BJT) - Single
- DC Current Gain (hFE) (Min) @ Ic, Vce : 200 @ 2mA, 5V
- Voltage - Collector Emitter Breakdown (Max) : 65 V
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Current - Collector Cutoff (Max) : 15nA (ICBO)
- Operating Temperature : 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 650mV @ 5mA, 100mA
3 Records