Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce : 60 @ 10mA, 5V
- Mounting Type : Through Hole
- Power - Max : 625 mW
- Voltage - Collector Emitter Breakdown (Max) : 150 V
- Current - Collector Cutoff (Max) : 50nA (ICBO)
- Package / Case : TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package : TO-92-3
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