Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- onsemi
- DC Current Gain (hFE) (Min) @ Ic, Vce : 1000 @ 4A, 4V
- Power - Max : 1.75 W
- Vce Saturation (Max) @ Ib, Ic : 4V @ 80mA, 8A
- Transistor Type : PNP - Darlington
- Voltage - Collector Emitter Breakdown (Max) : 100 V
- Supplier Device Package : DPAK
- Operating Temperature : -
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