Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Diodes Incorporated
- DC Current Gain (hFE) (Min) @ Ic, Vce : 10000 @ 100mA, 5V
- Vce Saturation (Max) @ Ib, Ic : 1.5V @ 100µA, 100mA
- Operating Temperature : -55°C ~ 150°C (TJ)
- Power - Max : 300 mW
- Voltage - Collector Emitter Breakdown (Max) : 30 V
- Transistor Type : PNP - Darlington
- Product Status : Discontinued at Digi-Key
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