Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Frequency - Transition : 120MHz
- Current - Collector Cutoff (Max) : 1µA (ICBO)
- Operating Temperature : 150°C (TJ)
- Vce Saturation (Max) @ Ib, Ic : 400mV @ 150mA, 3A
- Voltage - Collector Emitter Breakdown (Max) : 50 V
- DC Current Gain (hFE) (Min) @ Ic, Vce : 70 @ 1A, 1V
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Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 50V 5A PW... |
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35,000
In-stock
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Get Quote |