Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 120MHz
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Power - Max : 200 mW
- Product Status : Active
- Current - Collector (Ic) (Max) : 800 mA
- DC Current Gain (hFE) (Min) @ Ic, Vce : 160 @ 100mA, 1V
2 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
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Toshiba Electronic Devices and Storage Corporation | TRANS NPN 25V 0.8A T... |
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1,708
In-stock
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Get Quote | ||
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Toshiba Electronic Devices and Storage Corporation | TRANS PNP 25V 0.8A S... |
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35,000
In-stock
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Get Quote |