Transistors - Bipolar (BJT) - Single
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- Transistors - Bipolar (BJT) - Single
- Toshiba Electronic Devices and Storage Corporation
- Frequency - Transition : 120MHz
- Current - Collector Cutoff (Max) : 100nA (ICBO)
- Voltage - Collector Emitter Breakdown (Max) : 120 V
- Operating Temperature : 150°C (TJ)
- Transistor Type : NPN
- Package / Case : TO-243AA
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Toshiba Electronic Devices and Storage Corporation | PB-F POWER TRANSI... |
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