Transistors - FETs, MOSFETs - Arrays
- Current - Continuous Drain (Id) @ 25°C:
-
- FET Feature:
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Input Capacitance (Ciss) (Max) @ Vds:
-
- Operating Temperature:
-
- Package / Case:
-
- Power - Max:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
40 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
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onsemi | MOSFET 2N-CH 40V 7.4... |
-
|
27,626
In-stock
|
Get Quote | ||
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Infineon Technologies | MOSFET N-CH 40V 35A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH 40V 3.4... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 6.6... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 5A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 7.6... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 6A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 6A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 7.2... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH 40V 3.4... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET 2N-CH 40V 4.7... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 7.2... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 6.6... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 7.6... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 6A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET 2N-CH 40V 6A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 5A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 4.2... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Vishay | MOSFET 2N-CH 40V 4.2... |
-
|
35,000
In-stock
|
Get Quote |