Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss)：
-
- Drive Voltage (Max Rds On, Min Rds On)：
-
- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Operating Temperature：
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- Package / Case：
-
- Power Dissipation (Max)：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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- Vgs(th) (Max) @ Id：
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19 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Vishay | MOSFET P-CH 200V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 60V 1.8A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 60V 1.8A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 400V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 400V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET N-CH 800V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 400V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 400V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 560V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 650V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 60V 1.8A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 800V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
STMicroelectronics | MOSFET N-CH 100V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 800V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 600V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 800V 1.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Vishay | MOSFET P-CH 400V 1.8... |
-
|
35,000
In-stock
|
Get Quote |
