Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

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2 Records

Image	Part	Manufacturer	Description	Price		Stock	Action
	TSM4ND65CI	Taiwan Semiconductor	MOSFET N-CH 650V 4A...	-	PDF	3,877 In-stock	Get Quote
	TSM7ND65CI	Taiwan Semiconductor	MOSFET N-CH 650V 7A...	-	PDF	3,916 In-stock	Get Quote

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