Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
TK32E12N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 120V 60A...
-
46
In-stock
Get Quote
TK42E12N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 120V 88A...
-
35,000
In-stock
Get Quote
TK56E12N1,S1X Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 120V 56A...
-
35,000
In-stock
Get Quote
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