Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C：
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- FET Feature：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Power Dissipation (Max)：
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- Rds On (Max) @ Id, Vgs：
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9 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 5.2... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 5.8... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 600V 5.4... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 6.2... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 7.8... |
-
|
7
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 600V 11.... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 7A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 8A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 9.7... |
-
|
35,000
In-stock
|
Get Quote |
