Transistors - FETs, MOSFETs - Single
- Drive Voltage (Max Rds On, Min Rds On)：
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- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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17 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
onsemi | MOSFET N-CH 30V 7.2A... |
-
|
5,382
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | 7.2A, 30V, 0.021OHM, P-C... |
-
|
2,561
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | PMPB20EN - 30V, N-CH... |
-
|
5,899
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 40V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 200V 7.2... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 40V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 40V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N CH 30V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 30V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET BVDSS: 31V~... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 200V 7.2... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | MOSFET N-CH 30V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Fairchild Semiconductor | POWER FIELD-EFFE... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 40V 7.2A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 30V 7.2A... |
-
|
35,000
In-stock
|
Get Quote |
