Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C：

Drain to Source Voltage (Vdss)：

Gate Charge (Qg) (Max) @ Vgs：

Input Capacitance (Ciss) (Max) @ Vds：

Power Dissipation (Max)：

Rds On (Max) @ Id, Vgs：

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3 Records

Part	Manufacturer	Description	Price		Stock	Action
2SK2847(F)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 900V 8A...	-	PDF	35,000 In-stock	Get Quote
2SK2916(F)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 14A...	-	PDF	35,000 In-stock	Get Quote
2SK2917(F)	Toshiba Electronic Devices and Storage Corporation	MOSFET N-CH 500V 18A...	-	PDF	35,000 In-stock	Get Quote

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