Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss)：
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- Drive Voltage (Max Rds On, Min Rds On)：
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- FET Feature：
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- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Mounting Type：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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- Technology：
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- Vgs(th) (Max) @ Id：
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99 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
onsemi | MOSFET P-CH 20V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 20V 2A ... |
-
|
16,750
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
90,074
In-stock
|
Get Quote | ||
|
|
Intersil (Renesas Electronics Corporation) | MOSFET P-CH 20V 2A ... |
-
|
21,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
28,944
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET P-CH 20V 2A ... |
-
|
2,680
In-stock
|
Get Quote | ||
|
|
Renesas Electronics Corporation | HAT2203C-EL-E - SILI... |
-
|
9,000
In-stock
|
Get Quote | ||
|
|
Intersil (Renesas Electronics Corporation) | MOSFET P-CH 30V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 20V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 55V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET P-CH 30V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET P-CH 30V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 90V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 60V 2A ... |
-
|
35,000
In-stock
|
Get Quote |
