Transistors - FETs, MOSFETs - Single
- Drain to Source Voltage (Vdss)：
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- Drive Voltage (Max Rds On, Min Rds On)：
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- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Product Status：
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- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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- Technology：
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- Vgs (Max)：
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- Vgs(th) (Max) @ Id：
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77 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Diodes Incorporated | MOSFET P-CH 20V 3.2A... |
-
|
108,468
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 20V 3.2A... |
-
|
159,902
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET P-CH 20V 3.2A... |
-
|
146,375
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET P-CH 30V 3.2A... |
-
|
53,720
In-stock
|
Get Quote | ||
|
|
Taiwan Semiconductor | MOSFET P-CHANNEL... |
-
|
111,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET P-CH 12V 3.2A... |
-
|
131,315
In-stock
|
Get Quote | ||
|
|
Diodes Incorporated | MOSFET N-CH 12V 3.2A... |
-
|
21,695
In-stock
|
Get Quote | ||
|
|
PANJIT | 60V P-CHANNEL ENHA... |
-
|
64,580
In-stock
|
Get Quote | ||
|
|
Texas Instruments | MOSFET P-CH 20V 3.2A... |
-
|
12,000
In-stock
|
Get Quote | ||
|
|
PANJIT | 60V P-CHANNEL ENHA... |
-
|
61,348
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 30V 3.2A... |
-
|
8,765
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | SMOS P-CH VDSS:-20V... |
-
|
5,495
In-stock
|
Get Quote | ||
|
|
onsemi | MOSFET N-CH 20V 3.2A... |
-
|
17,520
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 20V 3.2A... |
-
|
5,592
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 20V 3.2A... |
-
|
3,774
In-stock
|
Get Quote | ||
|
|
PANJIT | 60V P-CHANNEL ENHA... |
-
|
2,990
In-stock
|
Get Quote |
