Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C：
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- Drive Voltage (Max Rds On, Min Rds On)：
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- FET Type：
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- Gate Charge (Qg) (Max) @ Vgs：
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- Input Capacitance (Ciss) (Max) @ Vds：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Product Status：
-
- Rds On (Max) @ Id, Vgs：
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- Supplier Device Package：
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46 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
ROHM Semiconductor | MOSFET N-CH 200V 5A... |
-
|
4,280
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET N-CH 200V 67A... |
-
|
64
In-stock
|
Get Quote | ||
|
|
Nexperia | N-CHANNEL POWER ... |
-
|
1,100
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | N-CHANNEL POWER ... |
-
|
1,000
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | BUZ30 - 12V-300V N-CHA... |
-
|
1,927
In-stock
|
Get Quote | ||
|
|
Infineon Technologies | MOSFET N-CH 200V 14.... |
-
|
20
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 200V 33A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 200V 21.... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
NXP Semiconductors | SMALL SIGNAL N-CH... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | POWER FIELD-EFFE... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Nexperia | MOSFET N-CH 200V 35A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET N-CH 200V 56A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET N-CH 200V 67A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Microchip Technology | MOSFET N-CH 200V 56A... |
-
|
35,000
In-stock
|
Get Quote |
