Transistors - FETs, MOSFETs - Single

Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Supplier Device Package:
Image Part Manufacturer Description Price Stock Action
TK4A80E,S4X Toshiba Electronic Devices and Storage Corporation
PB-FPOWERMOSFETT...
-
35,000
In-stock
Get Quote
2SK3798(STA4,Q,M) Toshiba Electronic Devices and Storage Corporation
POWER MOSFET TRA...
-
35,000
In-stock
Get Quote
STF5N95K3 STMicroelectronics
MOSFET N-CH 950V 4A...
-
35,000
In-stock
Get Quote
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