Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C:
-
- Drain to Source Voltage (Vdss):
-
- Gate Charge (Qg) (Max) @ Vgs:
-
- Operating Temperature:
-
- Power Dissipation (Max):
-
- Product Status:
-
- Rds On (Max) @ Id, Vgs:
-
- Supplier Device Package:
-
- Vgs(th) (Max) @ Id:
-
15 Records
Image | Part | Manufacturer | Description | Price | Stock | Action | |
---|---|---|---|---|---|---|---|
![]() |
Fairchild Semiconductor | N-CHANNEL POWER ... |
-
|
950
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
50
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | POWER FIELD-EFFE... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 11A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 9A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 500V 11A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 7A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 450V 12A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 550V 10A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | MOSFET N-CH 600V 11A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | MOSFET N-CH 650V 11A... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
Infineon Technologies | MOSFET N-CH 560V 11.... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
onsemi | MOSFET N-CH 250V 9.5... |
-
|
35,000
In-stock
|
Get Quote | ||
![]() |
PANJIT | 650V N-CHANNEL MOS... |
-
|
35,000
In-stock
|
Get Quote |