Transistors - IGBTs - Single
- Operating Temperature：
-
- Reverse Recovery Time (trr)：
-
- Switching Energy：
-
- Td (on/off) @ 25°C：
-
- Test Condition：
-
- Vce(on) (Max) @ Vge, Ic：
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- Voltage - Collector Emitter Breakdown (Max)：
-
9 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | IGBT TRANS 600V 30A... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | IGBT 600V 30A 170W TO... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | PB-F IGBT / TRANSI... |
-
|
35,000
In-stock
|
Get Quote | ||
|
|
Toshiba Electronic Devices and Storage Corporation | DISCRETE IGBT TR... |
-
|
35,000
In-stock
|
Get Quote |
